دیتاشیت SQ4431EY-T1_GE3
مشخصات دیتاشیت
| نام دیتاشیت | SQ4431EY-T1_GE3 |
|---|---|
| حجم فایل | 84.964 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 9 |
دانلود دیتاشیت SQ4431EY-T1_GE3 |
SQ4431EY-T1_GE3 Datasheet |
|---|
مشخصات
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Vishay Intertech SQ4431EY-T1_GE3
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 6W
- Total Gate Charge (Qg@Vgs): 25nC@10V
- Drain Source Voltage (Vdss): 30V
- Input Capacitance (Ciss@Vds): 1265pF@15V
- Continuous Drain Current (Id): 10.8A
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 30mΩ@6A,10V
- Package: SOP-8
- Manufacturer: Vishay Intertech
